ON Semiconductor launches a new series of high-performance, low-loss SUPERFET V MOSFETs for use in servers and telecommunications applications.

The new devices offer superior switching characteristics, enabling power supplies to meet the energy efficiency standards of the 80 PLUS Titanium certification.

On December 8, 2021, ON Semiconductor, a leader in intelligent power and smart sensing technology, announced a new series of 600 V SUPERFET V MOSFETs. These high-performance devices enable power supplies to meet stringent energy efficiency regulations such as 80 PLUS Titanium, especially under challenging 10% load conditions. The three product groups under the 600 V SUPERFET series -- FAST, Easy Drive, and FRFET -- are optimized to provide industry-leading performance in various different applications and topologies.
The 600 V SUPERFET V series offers excellent switching characteristics and lower gate noise, thereby reducing electromagnetic interference (EMI), which is a significant benefit for server and telecommunications systems. Additionally, the robust body diode and higher VGSS (DC ±30 V) enhance system reliability.
Senior Vice President and General Manager of ON Semiconductor's Advanced Power Division, Asif Jakwani, said, "The 80 Plus Titanium certification aims to address climate change by requiring server and data storage hardware to achieve an energy efficiency level of 90% under 10% load conditions and 96% under 50% load. Our SUPERFET V series, including the FAST, Easy Drive, and FRFET versions, are meeting these requirements, offering robust solutions to ensure continuous system reliability."
The FAST version provides high energy efficiency in hard-switching topologies (such as high-end PFC) and is optimized to offer lower gate charge (Qg) and EOSS losses for fast switching. The initial devices in this version include NTNL041N60S5H (41 mW RDS(on)) and NTHL185N60S5H (185 mW RDS(on)), both in TO-247 packaging. NTP185N60S5H is in TO-220 packaging, while NTMT185N60S5H is in an 8.0mm x 8.0mm x 1.0mm Power88 package, guaranteed to meet moisture sensitivity level (MSL) 1 and features a Kelvin (K) source architecture to improve gate noise and switching losses.
The Easy Drive version is suitable for hard-switching and soft-switching topologies, containing an integrated gate resistance (Rg) and optimized integrated capacitance. They are intended for general-purpose applications in many applications, including PFC and LLC. In these devices, the integrated Zener diode between the gate and source has an RDS(on) of over 120 mW, exerting less stress on the gate oxide and offering higher ESD durability, thereby improving yield and reducing yield loss. The two currently available devices, NTHL099N60S5 and NTHL120N60S5Z, have RDS(on) values of 99 mW and 120 mW, respectively, both in TO-247 packaging.
The Fast Recovery (FRFET) version is suitable for soft-switching topologies such as phase-shifted full bridge (PSFB) and LLC. Their advantage is the fast body diode and the reduced Qrr and Trr. The robust diode durability ensure higher system reliability. The built-in Zener diode NTP125N60S5FZ has an RDS(on) of 125 mW and comes in TO-220 packaging, while NTMT061N60S5F has an RDS(on) of 61 mW in a Power88 package. The device with the lowest losses is NTHL019N60S5F, with an RDS(on) as low as 19 mW, in TO-247 packaging.